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Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs

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5 Author(s)
Mazzanti, A. ; Dipt. di Ingegneria dell''Informazione, Universita di Modena e Reggio Emilia, Italy ; Verzellesi, G. ; Canali, C. ; Meneghesso, G.
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The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs doped-channel heterostructure field-effect transistors (HFETs) both through measurements and two-dimensional (2D) device simulations. The kink is shown to arise from the interaction of surface deep acceptors with impact-ionization-generated holes, the latter partially discharging the deep levels and therefore leading to conductive-channel widening and to drain-current increase. Under pulsed operation, kink dynamics is governed by hole emission and capture phenomena, prevailing at low and high drain-source voltages, respectively.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 7 )