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Ferroelectric-based functional pass-gate for low-power VLSI

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6 Author(s)
Kimura, H. ; Graduate Sch. of Inf. Sci., Tohoku Univ., Sendai, Japan ; Hanyu, T. ; Kameyama, M. ; Fujimori, Y.
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A ferroelectric-based functional pass-gate is proposed for low-power logic-in-memory VLSI which makes communication bottlenecks free. Since non-destructive storage and switching functions are merged into a ferroelectric capacitor, active-device counts become small, which reduces the dynamic power dissipation. The use of ferroelectric-based non-volatile storage makes leakage currents cut off. Applying the ferroelectric-based circuitry to binary CAM implementation results in about half dynamic power reduction and 1/22000 static power reduction, compared to a. CMOS implementation under 0.6 /spl mu/m ferroelectric/CMOS.

Published in:

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Date of Conference:

13-15 June 2002

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