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Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization

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4 Author(s)
Van der Straten, O. ; Sch. of Nanosciences & Nanoenginecring, State Univ. of New York, Albany, NY, USA ; Zhu, Y. ; Eisenbraun, E. ; Kaloyeros, A.

The barrier performance of a metal-organic atomic layer deposition (ALD) tantalum nitride process has been investigated for potential application as copper diffusion barrier in future device generations. This process, which is carried out at 250°C, thus enabling excellent integrability with thermally fragile dielectric systems, employs a commercial ALD reactor. Preliminary copper barrier performance results of ultrathin (6 nm) TaNx films, employing both thermal and electrical biasing, are presented and discussed.

Published in:

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Date of Conference:

2002