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Development of 300 mm low-k dielectric for 0.13 μm BEOL damascene process

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5 Author(s)
Lu, J.C. ; Res. & Dev., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan ; Chang, W. ; Jang, S.M. ; Yu, C.H.
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This paper discusses the development of 300 mm CVD low-k dielectric for the 0.13 μm technology Cu/low-k integration. A carbon doped oxide SiOC low-k dielectric was deposited in a 300 mm plasma enhanced CVD chamber using methylsilane-based precursor as the main source gas and other co-reactant gases. The blanket as-deposited film has a dielectric constant of ≤ 3 to integrate with a SiC etching stop layer with dielectric constant of ≤ 5. Excellent stack film thermal stability and adhesion for the Cu CMP process leads to a successful integration of 300 mm Cu/low-k backend process.

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Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

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