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Integration of SiCN as a low κ etch stop and Cu passivation in a high performance Cu/low κ interconnect

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13 Author(s)
Martin, J. ; Adv. Micro Devices, AMD/Motorola Alliance, Austin, TX, USA ; Filipiak, S. ; Stephens, T. ; Huang, F.
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This paper describes the integration of a silicon carbon nitride (SiCN) copper passivation and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of SiCN improves interconnect performance by virtue of its lower dielectric constant as compared to silicon nitride, and through changes to the process integration made possible by the improved etch selectivity and good copper interface properties.

Published in:

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Date of Conference:

2002

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