By Topic

Integration of SiCN as a low κ etch stop and Cu passivation in a high performance Cu/low κ interconnect

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Martin, J. ; Adv. Micro Devices, AMD/Motorola Alliance, Austin, TX, USA ; Filipiak, S. ; Stephens, T. ; Huang, F.
more authors

This paper describes the integration of a silicon carbon nitride (SiCN) copper passivation and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of SiCN improves interconnect performance by virtue of its lower dielectric constant as compared to silicon nitride, and through changes to the process integration made possible by the improved etch selectivity and good copper interface properties.

Published in:

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Date of Conference: