By Topic

InAs-QD growth and its application for long-wavelength lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Saito, H. ; Photonic & Wireless Devices Res. Labs., NEC Corp., Tsukuba, Japan

Uniform self-assembled quantum dots of InAs were grown with high density on both GaAs and InP substrates. The dots were used in fabricating 1.3-μm lasers on the GaAs substrates and 1.55-μm lasers on the InP substrates. We applied p-type doping of the active region to increase the modulation bandwidth of the QD laser by up to 5 GHz. The QD laser had a very low level of chirp in its lasing wavelength during direct modulation at 2.5 GHz.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002