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Uniform self-assembled quantum dots of InAs were grown with high density on both GaAs and InP substrates. The dots were used in fabricating 1.3-μm lasers on the GaAs substrates and 1.55-μm lasers on the InP substrates. We applied p-type doping of the active region to increase the modulation bandwidth of the QD laser by up to 5 GHz. The QD laser had a very low level of chirp in its lasing wavelength during direct modulation at 2.5 GHz.