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Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes

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6 Author(s)
H. Yagi ; Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan ; K. Muranushi ; N. Nunoya ; T. Sano
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GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers with the wire widths of 18 nm and 27 nm in the period of 80 nm were fabricated by electron beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was obtained to be less than ± 2 nm. From EL spectra of various wire widths lasers, a larger energy blue shift than that from a simple analysis model was observed, which can be attributed to residual compressive strain between the active region and surrounding InP layer.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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