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Quantum dash lasers on the InP system with self-assembled InAs dashes were grown by gas source molecular beam epitaxy using the alternative group-V-precursors TBA and TBP additionally to solid-state arsenic. Studies of the influence of several growth parameters on the dash formation like growth temperature, buffer layer etc. were done by photoluminescence and scanning electron microscopy measurements. The lasers cover a large wavelength range from 1.55 to 1.78 μm just by varying the quantum dash layer thickness. Output power versus injection current shows a good transparency threshold current density below 900 A/cm2 at room temperature. The thermal properties especially the low shift of the emission wavelength with the temperature are very promising for the realization of telecommunication applications.