System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

Self-assembled quantum-dash lasers on the InP system

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Schwertberger, R. ; Dept. Technische Phys., Wurzburg Univ., Germany ; Gold, D. ; Reithmaier, J.P. ; Forchel, A.

Quantum dash lasers on the InP system with self-assembled InAs dashes were grown by gas source molecular beam epitaxy using the alternative group-V-precursors TBA and TBP additionally to solid-state arsenic. Studies of the influence of several growth parameters on the dash formation like growth temperature, buffer layer etc. were done by photoluminescence and scanning electron microscopy measurements. The lasers cover a large wavelength range from 1.55 to 1.78 μm just by varying the quantum dash layer thickness. Output power versus injection current shows a good transparency threshold current density below 900 A/cm2 at room temperature. The thermal properties especially the low shift of the emission wavelength with the temperature are very promising for the realization of telecommunication applications.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002