Antimony-based III-V materials grown by OMVPE for thermophotovoltaics and lasers

This paper discusses recent advances in organometallic vapor phase epitaxy (OMVPE) growth of GaInAsSb and AlGaAsSb alloys, with a particular emphasis on identifying growth conditions that lead to improvements in material quality and heterostructure growth. Furthermore, the performance of thermophotovoltaic (TPV) devices, distributed Bragg reflectors, and quantum-well diode lasers based on GaInAsSb/AlGaAsSb/GaSb heterostructures is described.