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Antimony-based III-V materials grown by OMVPE for thermophotovoltaics and lasers

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1 Author(s)
Wang, C.A. ; Lincoln Lab., MIT, Lexington, MA, USA

This paper discusses recent advances in organometallic vapor phase epitaxy (OMVPE) growth of GaInAsSb and AlGaAsSb alloys, with a particular emphasis on identifying growth conditions that lead to improvements in material quality and heterostructure growth. Furthermore, the performance of thermophotovoltaic (TPV) devices, distributed Bragg reflectors, and quantum-well diode lasers based on GaInAsSb/AlGaAsSb/GaSb heterostructures is described.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002

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