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Effect on lattice parameter and optical band gap of thallium incorporation in a GaInAs matrix

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10 Author(s)
Regreny, P. ; LEOM, Ecole Centrale de Lyon, Ecully, France ; Sanchez-Almazan, F. ; Beneyton, R. ; Gendry, M.
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Using low temperature molecular beam epitaxy, we report the growth of thin layers of (Ga1-yIny)1-xTlxAs alloys on InP(001) substrates with thallium incorporation rates up to 12%. The lattice parameters and band gaps of these layers have been determined using Double Crystal X-ray diffraction and optical absorption techniques, respectively. The so-obtained experimental results are found to match the theoretical values predicted by Van Schilfgaarde et a1 for TlAs lattice parameter and band gap.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

16-16 May 2002