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Fabrication of 1.55 μm In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

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5 Author(s)
Jae Su Yu ; Dept. of Inf. & Commun., Kwang-Ju Inst. of Sci. & Technol., Gwangju, South Korea ; Jin Dong Song ; Jong Min Kim ; Seong Ju Bae
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We fabricated MBE-grown InGaAs/InGaAlAs SCH MQW ridge-waveguide lasers with InGaAlAs digital alloy layers after post-growth rapid thermal annealing using an SiO2 capping layer. The lasers fabricated on as-grown substrate and annealed substrates were compared by I-V and I-L measurements. The electrical characteristics of the annealed lasers were not degraded by the annealing process compared to those of as-grown lasers. The threshold current and slope efficiency of the fabricated lasers were improved with the increase of RTA temperature. For a 10-μm-wide and 600-μm-length laser fabricated after an RTA of 850°C for 45 sec, the internal quantum efficiency of about 27.6% per facet and the threshold current density of about 1.53 kA/cm2 were obtained at room temperature.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002