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Highly uniform 4-inch diameter InGaAs/InP epitaxial wafer for PIN-PD application

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6 Author(s)
Doi, H. ; Epi Solution Div., Sumitomo Electr. Industries Ltd., Hyogo, Japan ; Iguchi, Y. ; Kimura, H. ; Iwasaki, T.
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InGaAs/InP epitaxial layers were grown on four-inch S-doped InP substrates using production-scale organometallic vapor-phase epitaxy (OMVPE) system. High uniformity has been obtained by optimizing the growth conditions. For example, thickness uniformity of 1.09% in InGaAs layer, 1.39% in InP layer has been obtained. Also low dark current (<0.3 nA/200 μm φ at VR=5 V) has been achieved in planar type PIN-PD device. These results will highlight the large-diameter InGaAs/InP epitaxial growth for device cost performance

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002