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Control of the growth mode and the wire width were attempted for selective MBE growth of InGaAs quantum wire (QWR) arrays on patterned  InP substrates. InGaAs ridge structure arrays were grown first, and then InAlAs/InGaAs/InAlAs layers were supplied to grow QWR arrays by self-organization. By combining a Ga-stabilized flat-top growth mode and an As stabilized sharp-top growth mode under low V/III ratios for InGaAs ridge structure growth, initial pattern non-uniformity was removed, achieving ridge roughness below a monoatomic step level. Highly uniform and narrow arrow-headed InGaAs QWR arrays were formed under a tight wire width control, showing strong PL emission with a narrow FWHM of 19 meV.