By Topic

Control of growth mode and wire width in selective molecular beam epitaxy growth of InGaAs quantum wire arrays on InP [001] substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Chao Jiang ; Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan ; Muranaka, T. ; Hasegawa, Hideki

Control of the growth mode and the wire width were attempted for selective MBE growth of InGaAs quantum wire (QWR) arrays on patterned [001] InP substrates. InGaAs ridge structure arrays were grown first, and then InAlAs/InGaAs/InAlAs layers were supplied to grow QWR arrays by self-organization. By combining a Ga-stabilized flat-top growth mode and an As stabilized sharp-top growth mode under low V/III ratios for InGaAs ridge structure growth, initial pattern non-uniformity was removed, achieving ridge roughness below a monoatomic step level. Highly uniform and narrow arrow-headed InGaAs QWR arrays were formed under a tight wire width control, showing strong PL emission with a narrow FWHM of 19 meV.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference: