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Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping

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5 Author(s)
Vignaud, D. ; Inst. d''Electronique et de Microelectronique du Nord, Villeneuve d''Ascq, France ; Lampin, J.F. ; Lefebvre, E. ; Zaknoune, M.
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The electron lifetime has been studied by a pump-probe optical transmission technique in heavily Be-doped InGaAs lattice-matched to InP as a function of the growth temperature (350≤Tg≤500°C) and doping (2×1019≤[Be]≤2.6×1020 cm-3). Reduction of the growth temperature to 350-400°C induces the creation of electron recombining centers, efficient at the lowest doping studied here. But, for higher dopings, these defects have negligible effects compared to intrinsic Auger processes: the high diffusion of Be can thus be limited by growing heterostructures at reduced temperatures without compromising the electron lifetime. Sub-picosecond electron lifetimes have been measured at the highest doping.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002

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