By Topic

Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)

We have succeeded in developing 30-nm-gate lattice-matched InGaAs/InAlAs HEMTs with an extremely high cutoff frequency ft of 472 GHz, the highest value yet reported for any transistor. The superior high-speed characteristics of our HEMT were mainly due to a much reduced lateral gate-recess length while maintaining a small gate-to-channel distance, which enhanced the average electron velocity under the gate. We fabricated asymmetrically recessed-gate HEMTs to separately investigate the effect of source- and drain-side recess lengths on ft, and clarified that the drain-side recess is more critical to a superior ft. Monte Carlo simulation results were consistent with the experimental observations

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference: