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III-V nitride electronics

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1 Author(s)
Pavlidis, D. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

The properties and performance of III-V nitride electronic devices are reviewed. These include AlGaN/GaN and AlN/GaN HEMTs, as well as, two-terminal Gunn devices. The high frequency, power, noise characteristics and performance limitations such as dispersion are addressed.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002