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GaAs-based GaAsNSe/GaAs superlattices emitting at 1.5 /spl mu/m-wavelength region

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2 Author(s)
Uesugi, Katsuhiro ; Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan ; Suemune, Ikuo

GaAsNSe/GaAs superlattices (SLs) were grown on GaAs(001) substrates by metalorganic molecular beam epitaxy (MOMBE). Strong photoluminessence (PL) emission with wide luminescence line at 1.5 μm-wavelength region was observed. It was found that nonradiative recombination in GaAsNSe layers was suppressed by heavy Se doping. GaAsNSe alloy is expected to be a new material for the 1.5 μm-wavelength devices of the GaAs based ststem.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

16-16 May 2002

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