By Topic

GaAs-based GaAsNSe/GaAs superlattices emitting at 1.5 /spl mu/m-wavelength region

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Uesugi, Katsuhiro ; Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan ; Suemune, Ikuo

GaAsNSe/GaAs superlattices (SLs) were grown on GaAs(001) substrates by metalorganic molecular beam epitaxy (MOMBE). Strong photoluminessence (PL) emission with wide luminescence line at 1.5 μm-wavelength region was observed. It was found that nonradiative recombination in GaAsNSe layers was suppressed by heavy Se doping. GaAsNSe alloy is expected to be a new material for the 1.5 μm-wavelength devices of the GaAs based ststem.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

16-16 May 2002