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Long wavelength GaInNAs(Sb) lasers on GaAs

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7 Author(s)
Ha, W. ; Solid State & Photonics Lab., Stanford Univ., CA, USA ; Gambin, V. ; Bank, Seth ; Wistey, M.
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Presents new techniques for developing long wavelength post-annealed GaInNAs(Sb) materials grown by solid source MBE (SSMBE) with a RF plasma nitrogen source. Rather than utilizing conventional GaAs barriers between GaInNAs quantum wells (QWs), we have grown GaNAs barriers. This design reduces the blue-shift of the emission spectrum due to decreased nitrogen out-diffusion. Moreover, the decreased carrier confinement of GaNAs further supports longer emission wavelength compared to GaAs barrier. Additional benefit of GaNAs barriers is a reduction in the overall compressive strain of the active region because GaNAs is under tensile-strain.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002