By Topic

Long wavelength GaInNAs(Sb) lasers on GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ha, W. ; Solid State & Photonics Lab., Stanford Univ., CA, USA ; Gambin, V. ; Bank, Seth ; Wistey, M.
more authors

Presents new techniques for developing long wavelength post-annealed GaInNAs(Sb) materials grown by solid source MBE (SSMBE) with a RF plasma nitrogen source. Rather than utilizing conventional GaAs barriers between GaInNAs quantum wells (QWs), we have grown GaNAs barriers. This design reduces the blue-shift of the emission spectrum due to decreased nitrogen out-diffusion. Moreover, the decreased carrier confinement of GaNAs further supports longer emission wavelength compared to GaAs barrier. Additional benefit of GaNAs barriers is a reduction in the overall compressive strain of the active region because GaNAs is under tensile-strain.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference: