By Topic

Comparative review of (GaIn)(PAs), (AlGaIn)As, (GaIn)(NaS) and Ga(AsSb) based materials for 1.3 μm laser applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
W. Stolz ; Dept. of Phys., Philipps-Univ., Marburg, Germany

Summary form only given. Laser devices with emission wavelengths at 1.3 μm are of key importance for applications in data and telecommunication systems in particular for local area and metropolitan area networks. At present, primarily the InP-based (GaIn)(PAs) and (AlGaIn)As material systems have been applied to realize such laser structures. In recent years, novel material systems and heterostructures like (GaIn)(NAs) and Ga(AsSb) have gained increasing interest due to their unique physical properties. This review intends to summarize the present situation of the device performance both for edge-emitting as well as vertical cavity surface emitting (VCSEL) laser structures related to materials and heterostructure properties point of view.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference: