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Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy

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3 Author(s)
Sun, Y.T. ; Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden ; Napierala, J. ; Lourdudoss, S.

Selective area growth of InP is carried out on an InP precoated [001] 2° off Si substrate in a low pressure hydride vapor phase epitaxy system under different gas phase supersaturation. Epitaxial lateral overgrowth can be formed on a Si3N4 mask under certain growth conditions, which has improved crystallographic quality of the InP seed layer. A crystallographic model is proposed to demonstrate the observed asymmetric growth profile of selective area growth.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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