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A new quantum well intermixing technique using inductively-coupled Argon plasma on InGaAs/InGaAsP laser structures

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3 Author(s)
Leong, D. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Djie, H.S. ; Dowd, P.

A new quantum-well intermixing technique is demonstrated on InGaAs/InGaAsP quantum well laser structures using Argon plasma, generated by an Inductively Coupled Plasma (ICP) etcher. The parameters of the process were optimised using Taguchi's method. Using RF power of 480 W and low ICP power of 500 W, a blue shift of 104 nm was obtained after exposure to the plasma for 5 minutes

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002

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