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A novel nitride passivation of 0.1 μm InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD) is reported. The nitride films deposited by HD-ICP-CVD have a lower wet HF etch rate (high density) and lower hydrogen concentration than those deposited by PECVD. A reduction of surface leakage current after passivation was observed; resulting in an approximate 40% improvement of off-state reverse breakdown voltage over that of PECVD passivated devices. The increase in breakdown voltage implies a potential improvement in power performance at millimeter wave frequency. A successful demonstration of HD-ICP-CVD passivated InP HEMTs promises adoption of HD-ICP-CVD nitride deposition for the next-generation InP HEMT passivation technique.