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1.2 μm band multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array on patterned substrate

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7 Author(s)
Arai, M. ; Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan ; Kondo, T. ; Azuchi, M. ; Uchida, T.
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We demonstrated a single-mode multiple wavelength VCSEL array with highly strained GaInAs/GaAs QWs on a patterned GaAs substrate in a new wavelength band of 1.1-1.2 μm. The emission wavelength of a 4-channel array ranges from 1137 nm to 1144 nm. We carried out data transmission experiment through a 5 km single mode fiber with 2.5 Gbps/channel. The total throughput reaches 10 Gbps. This novel WDM source would be a good candidate for WDM-LAN beyond 10 Gbps. In addition, we show a potential extension of the wavelength span for multiple wavelength VCSEL arrays by optimizing the pattern shape of a substrate.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002