By Topic

Single transverse mode operation of 1.55-μm buried heterostructure VCSELs on GaAs substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ohiso, Y. ; Photonics Labs., NTT Corp., Kanagawa, Japan ; Okamoto, H. ; Iga, R. ; Kishi, K.
more authors

We report single transverse mode operation of 1.55-μm buried heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs). Thin-film wafer fusion enables us to fabricate BH InP-based layers on a GaAs/AlAs distributed Bragg reflector. Since the BH has an appropriate differential refractive index, a VCSEL with a large emission area exhibits single mode operation up to about 0.1-mW optical output power. This device also exhibits minimum threshold current around room temperature and 75°C maximum continuous-wave operation temperature.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002