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Single transverse mode operation of 1.55-μm buried heterostructure VCSELs on GaAs substrate

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5 Author(s)
Ohiso, Y. ; Photonics Labs., NTT Corp., Kanagawa, Japan ; Okamoto, H. ; Iga, R. ; Kishi, K.
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We report single transverse mode operation of 1.55-μm buried heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs). Thin-film wafer fusion enables us to fabricate BH InP-based layers on a GaAs/AlAs distributed Bragg reflector. Since the BH has an appropriate differential refractive index, a VCSEL with a large emission area exhibits single mode operation up to about 0.1-mW optical output power. This device also exhibits minimum threshold current around room temperature and 75°C maximum continuous-wave operation temperature.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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