Single transverse mode operation of 1.55-/spl mu/m buried heterostructure VCSELs on GaAs substrate

We report single transverse mode operation of 1.55-/spl mu/m buried heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs). Thin-film wafer fusion enables us to fabricate BH InP-based layers on a GaAs/AlAs distributed Bragg reflector. Since the BH has an appropriate differential refractive index, a VCSEL with a large emission area exhibits single mode operation up to about 0.1-mW optical output power. This device also exhibits minimum threshold current around room temperature and 75/spl deg/C maximum continuous-wave operation temperature.