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Vacancy-type defects in GaAsN grown by metalorganic vapor phase epitaxy

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6 Author(s)
Toivonen, J. ; Optoelectronics Lab., Helsinki Univ. of Technol., Espoo, Finland ; Oila, J. ; Saarinen, K. ; Hakkarainen, T.
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Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers grown by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen source. A clear signal of vacancies in the GaAsN epilayer was found and a rapid increase in density of the vacancies was observed with increasing nitrogen composition. We propose these vacancies to be Ga vacancies in defect complexes.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002