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Growth temperature dependence of annealing effect for GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

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5 Author(s)
Kawaguchi, M. ; P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Miyamoto, T. ; Minobe, S. ; Koyama, F.
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We have investigated the growth temperature dependence of the optical property change induced by a thermal annealing for a GaInNAs/GaAs quantum well grown by metalorganic chemical vapor deposition. We found that the wavelength blue shift induced by the thermal annealing of GaInNAs strongly depends on the growth temperature. The emission wavelength blue shift significantly decreased at growth temperatures lower than 500°C. The obtained result will be useful for improving the performance of GaInNAs lasers especially for vertical-cavity surface-emitting lasers.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002