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In this contribution the investigation of nano(micro)relief processing for InP substrates (by varying the wet chemical anisotropic etching) is described in detail. The morphology (quasigratings, dendrites, pyramids) and statistical parameters were investigated with the help of AFM. To select the optimum microrelief processing the optical (reflection) and photoelectric characteristics of both metal/InP and electrolyte/InP barrier structures were measured in UV, Vis and NIR. Results are promising for development of nano(micro)reliefs for optoelectronic application.