By Topic

Processing of nano(micro)relief InP surface for optoelectronic applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
N. L. Dmitruk ; Inst. for Phys. of Semicond., Acad. of Sci., Kyiv, Ukraine ; O. I. Mayeva ; I. B. Mamontova

In this contribution the investigation of nano(micro)relief processing for InP substrates (by varying the wet chemical anisotropic etching) is described in detail. The morphology (quasigratings, dendrites, pyramids) and statistical parameters were investigated with the help of AFM. To select the optimum microrelief processing the optical (reflection) and photoelectric characteristics of both metal/InP and electrolyte/InP barrier structures were measured in UV, Vis and NIR. Results are promising for development of nano(micro)reliefs for optoelectronic application.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference: