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InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate

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6 Author(s)
Shin-Jae Kang ; Dept. of Inf. & Commun., K-JIST, Kwangju, South Korea ; Jae-Chun Han ; Jeong-Hoon Kim ; Jo, Seong-June
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We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In0.53Ga0.47As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide showed low leakage current and small capacitance-voltage hysteresis. 1.5×50 μm2 depletion-mode In0.53Ga0.47Asand InP-channel MOSFETs were fabricated by using a conventional optical lithography. The gate oxide was formed by a liquid phase oxidation of InGaAs ohmic cap layer and subsequently an oxygen plasma treatment after mesa etching and ohmic metallization. The drain current-voltage characteristics of In0.53Ga0.47As- and InP-channel MOSFETs showed a complete pinch-off and saturation. The fT and fmax of the In0.53Ga0.47As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively, and those of the InP-channel MOSFET were approximately 10.5 GHz and 70 GHz, respectively.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002