Cart (Loading....) | Create Account
Close category search window
 

On the thermal resistance of metamorphic and lattice-matched InP HBTs: a comparative study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hong Wang ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Hong Yang ; Radhakrishnan, K. ; Tan, C.L.

Studies on thermal resistance of InP heterojunction bipolar transistors grown on GaAs (MHBT) and InP (LHBT) substrates are have been reported. A significant increase in the thermal resistance (Rth) for MHBT is observed. Rth for the MHBT is found to be in the range of 2320 to 2615°C/W, which is roughly 80% higher than that of LHBT. This could be attributed the extremely low thermal conductivity of the ternary metamorphic buffer layer as well as the low thermal conductivity of GaAs substrates.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.