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On the thermal resistance of metamorphic and lattice-matched InP HBTs: a comparative study

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4 Author(s)
Hong Wang ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Hong Yang ; Radhakrishnan, K. ; Tan, C.L.

Studies on thermal resistance of InP heterojunction bipolar transistors grown on GaAs (MHBT) and InP (LHBT) substrates are have been reported. A significant increase in the thermal resistance (Rth) for MHBT is observed. Rth for the MHBT is found to be in the range of 2320 to 2615°C/W, which is roughly 80% higher than that of LHBT. This could be attributed the extremely low thermal conductivity of the ternary metamorphic buffer layer as well as the low thermal conductivity of GaAs substrates.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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