By Topic

Fabrication of 1.55 μm VCSELs using metallic bonding on Si substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lin, H.C. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Wang, W.H. ; Pickrell, G.W. ; Cheng, K.Y.

Using Au-based multi-layered metals as the wafer bonding medium, long-wavelength GaInAsP/InP VCSELs were fabricated on Si substrates. High contrast Al-oxide/Si (Δn∼1.6) were employed as the upper and lower DBRs such that the need to grow thick epitaxial DBRs is eliminated. The bonding process can be performed at a low temperature around 320°C and it does not require any special treatment and alignment on the bonding wafers. The bonding interface was formed outside the VCSEL cavity, which reduced the impact on the active region of the device brought by the bonding process. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002