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Waveguide HBT electroabsorption modulators: devices and circuits

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6 Author(s)
T. Reimann ; Solid-State Electron. Dept, Gerhard Mercator Univ., Duisburg, Germany ; A. Schneider ; S. Neumann ; A. Stohr
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We show the monolithic integration of an HBT and EAM which are merged to a combined device able to operate as an electronic and optical component (HBT-EAM) simultaneously. Comparison to a pure EAM made from the same InP-based layer stack gives an improved optical modulation contrast up to 20 GHz. To demonstrate the concept, a differential amplifier is built which results in a voltage gain of 8 at 2.55 GHz, limited mainly due to a load resistor of 500 Ω. To improve optical modulation an InGaAlAs base is realized to give a better contrast of up to 10 dB, while the DC current gain is 3.5 and has to be optimized

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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