By Topic

High-performance 1.2-μm highly strained InGaAs/GaAs quantum well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Mogg, S. ; Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden ; Plaine, G. ; Asplund, C. ; Sundgren, P.
more authors

The growth and characterisation of high-performance 1.2-μm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference: