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Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography

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6 Author(s)
Bach, L. ; Technische Phys., Wurzburg Univ., Germany ; Wolf, A. ; Reithmaier, J.P. ; Forchel, A.
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By using focused ion beam lithography, high performance 1.55 μm emitting distributed Bragg reflector lasers were realized suitable for high speed optical telecommunication. Threshold currents of 8 mA and continuous wave efficiencies of 0.37 W/A for 600 μm long devices were achieved. Stable single mode emission with side mode suppression ratios of > 40 dB were observed for the entire operation range. By using 3-sectional DBR-lasers, we could increase the output power of the lasers up to 68 mW. Also we achieved a higher single mode yield with side mode suppression ratios of more than 60 dB and a higher thermal stability.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002