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Energetics and fs-dynamics at [100] surfaces of MOCVD-grown III-V semiconductors

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7 Author(s)
Hannappel, T. ; Hahn-Meitner-Inst., Berlin, Germany ; Toben, L. ; Moller, K. ; Gundlach, L.
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MOCVD-preparation of ordered [100] surfaces of InP and GaP was monitored in-situ with reflectance difference/anisotropy spectroscopy (RDS/RAS). RDS was measured at 20 K after contamination-free transfer of the sample to UHV. Specific RD spectra with the highest peaks and fine structure were correlated with different ordered surface reconstructions. The ordered In-rich InP[100] surface was investigated with femtosecond 2PPE. Surface states and surface resonances near the Γ-point showed up as peaks in the 2PPE spectrum in agreement with theoretical predictions.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002

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