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Quantitative X-ray analysis of high performance InP/(InGa)As:C HBT for rapid non-destructive material qualification

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7 Author(s)
P. Velling ; IPAG - Innovative Process. AG, Duisburg, Germany ; D. Keiper ; A. Brennemann ; M. Agethen
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Carbon doped InP/(InGa)As Heterostructure Bipolar Transistors (HBT) are of interest for today's (OC-768) and tomorrow's (OC-3072, 100 Gbit Ethernet, UMTS) communication standards. For a reliable fabrication of these complex radio frequency (opto-)electronic circuits, a quantitative InP process technology control is necessary starting at the level of device epi-layer stacks. In this paper the quantitative characterization of an InP/(InGa)As:C HBT is carried out by non-destructive X-ray analysis. Based on X-ray measurements in 004- and 002-reflection, a detailed analysis of complex device layer stacks is purposed. As a result, an automatic calculation of layer parameters, e.g. thickness and composition is possible, reducing the turnaround time for statistical process control (SPC).

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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