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High-quality 1.3 μm AlGaInAs MQW by narrow-stripe selective metalorganic vapor-phased epitaxy and its application in buried heterostructure laser diodes

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8 Author(s)
Nakamura, T. ; Photonic & Wireless Device Res. Labs., NEC Corp., Shiga, Japan ; Ohsawa, Y. ; Okuda, T. ; Tsuruoka, K.
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High-quality 1.3 μm AlGaInAs MQW by narrow-stripe selective MOVPE has been investigated and then applied to an AlGaInAs BH laser diode by using an Al-oxidation-free process. A low threshold current of 9.0 mA and a relaxation frequency of more than 10 GHz were obtained at 85°C.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002