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High performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

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7 Author(s)
Li, Wei ; Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland ; Konttinen, J. ; Chang Si Peng ; Jouhti, T.
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GaInNAs/GaAs quantum well (QW) structures and lasers are grown by molecular beam epitaxy (MBE) using an RF-plasma source. Optimal GaInNAs/GaAs QW structures have been designed and grown in order to achieve the brightest and narrowest photoluminescence (PL) spectra beyond 1.30 μm. State-of-the-art GaInNAs/GaAs SQW lasers operating at 1.32 μm have been demonstrated. For a broad area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 μm, threshold current density as low as 546 A/cm2 is obtained at room temperature. Optical output up to 40 mW per facet under continuous wave operation is achieved for these uncoated lasers at room temperature.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002

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