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InP HEMT and HBT applications beyond 200 GHz

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4 Author(s)
D. Streit ; TRW Space & Electron., Velocium, El Segundo, CA, USA ; R. Lai ; A. Oki ; A. Gutierrez-Aitken

InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW's InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002