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A new readout circuit for an ultra high sensitivity CMOS image sensor

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5 Author(s)
T. Watabe ; NHK Sci. & Tech. Res. Labs., Tokyo, Japan ; M. Goto ; H. Ohtake ; H. Maruyama
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We have developed a new readout circuit for highly sensitive CMOS image sensors. The circuit makes it possible to obtain high signal-to-noise ratio (S/N) by effectively transferring signal charges accumulated in the photo-diode (PD) to a smaller capacitance. We fabricated and tested a CMOS image sensor with the readout circuit, and confirmed that it has higher sensitivity than conventional passive-type CMOS image sensors.

Published in:

Consumer Electronics, 2002. ICCE. 2002 Digest of Technical Papers. International Conference on

Date of Conference:

18-20 June 2002