By Topic

Accurate and computationally efficient analytical 1-D and 2-D ion implantation models based on Legendre polynomials

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Di Li ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Shrivastav, G. ; Geng Wang ; Yang Chen
more authors

Computationally efficient ion implantation modeling has become the essential tool for efficient and accurate CMOS design as aggressive scaling of devices continues. Specifically, computationally efficient two-dimensional (2-D) analytical models are often more attractive than physically-based Monte Carlo simulations since the latter are expensive in terms of computational time. Here we present new computational-efficient analytical models to simulate one-dimensional (1-D) and 2-D impurity and damage profiles. Legendre polynomials are used as basis functions in view of their orthogonality and good interpolation property. Conventional superposition approaches for 2-D implant modeling are explained and the shortcomings are analyzed. A dose splitting approach is incorporated in the new 2-D model to account for the nonlinear dc-channeling effect as implantation-induced damage accumulates. Good agreement with a physically-based and experimentally verified Monte Carlo simulator (UT-MAR-LOWE with TOMCAT) has been obtained for both impurity and damage profiles with a 50× reduction of computational time for medium-energy implants

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 7 )