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Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates

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2 Author(s)
Ryu, S.-W. ; Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; Dapkus, P.D.

A GaAsSb/InGaAs type-II quantum well laser diode on GaAs substrates was demonstrated for the first time. Threshold current density of 610 A/cm2 was obtained from a 1.1 mm-long broad area laser with the emission wavelength of 1.2 μm

Published in:

Electronics Letters  (Volume:38 ,  Issue: 12 )