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Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage

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3 Author(s)
Iturbide-Sanchez, F. ; Dept. of Electr. Eng., Massachusetts Univ., Amherst, MA, USA ; Jardon-Aguilar, H. ; Tirado-Mendez, J.A.

Different high-linearity low noise amplifier (LNA) structures have been designed, simulated and compared, providing good performance results concerning noise figure, bandwidth, power gain, intermodulation and gain compression, when a low-level voltage supply is used. The structures were designed to be used in personal communication systems (PCSs), operating at 1900 MHz using a SiGe heterojunction bipolar transistor (HBT) and 2.4 V bias polarisation

Published in:

Electronics Letters  (Volume:38 ,  Issue: 12 )