By Topic

GaInAs-GaInNAs-GaInAs intermediate layer structure for long wavelength lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
E. Gouardes ; Alcatel Corporate Res. Center, OPTO+, Marcoussis, France ; T. Miyamoto ; M. Kawaguchi ; K. Kondo
more authors

Proposes two new structures, the GaInAs-GaInNAs intermediate layer (IML) and the GaInN/sub x/As graded wells, which show better optical properties than the commonly used GaInNAs-GaAs rectangular quantum-wells. A 1240-nm emitting IML laser has been achieved with a low-threshold current density (200 A/cm/sup 2//well) and a relatively high characteristic temperature (T/sub o/=100 K). The IML structure is very promising for long wavelength GaAs-based laser applications.

Published in:

IEEE Photonics Technology Letters  (Volume:14 ,  Issue: 7 )