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GaInAs-GaInNAs-GaInAs intermediate layer structure for long wavelength lasers

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6 Author(s)
Gouardes, E. ; Alcatel Corporate Res. Center, OPTO+, Marcoussis, France ; Miyamoto, T. ; Kawaguchi, M. ; Kondo, K.
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Proposes two new structures, the GaInAs-GaInNAs intermediate layer (IML) and the GaInN/sub x/As graded wells, which show better optical properties than the commonly used GaInNAs-GaAs rectangular quantum-wells. A 1240-nm emitting IML laser has been achieved with a low-threshold current density (200 A/cm/sup 2//well) and a relatively high characteristic temperature (T/sub o/=100 K). The IML structure is very promising for long wavelength GaAs-based laser applications.

Published in:

Photonics Technology Letters, IEEE  (Volume:14 ,  Issue: 7 )