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The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs

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4 Author(s)
Kosier, S.L. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Schrimpf, R.D. ; Cellier, F.E. ; Galloway, K.F.

The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs were examined through two-dimension simulation. The breakdown-voltage performance of p-channel power MOSFETs was found to be very different from that of corresponding n-channel power MOSFETs. In p-channel devices, simulation showed breakdown-voltage enhancement for low values of positive oxide-trapped charge, Not, whereas for high values of Not , the breakdown voltage may or may not continue to increase, and may actually decrease in some topologies. For comparison, in n-channel devices, increases in Not always cause breakdown-voltage degradation. The uncertainties stem from the interaction of the depletion region of the device (which is a function of its termination method) with its isolation technology, making it difficult to predict breakdown voltage for large Not. However, insights gained through analysis of depletion-region spreading in p-channel devices suggest a termination/isolation scheme, the VLD-FRR, that will enhance p-channel device reliability in radiation environments

Published in:

Nuclear Science, IEEE Transactions on  (Volume:37 ,  Issue: 6 )

Date of Publication:

Dec 1990

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