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Total-dose characterization of a high-performance radiation-hardened 1.0-μm CMOS sea-of-gates technology

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5 Author(s)
Yoshii, I. ; Toshiba Corp., Kawasaki, Japan ; Hama, K. ; Maeguchi, K. ; Takatsuka, S.
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A radiation-hardened CMOS sea-of-gates technology with 1.0-μm geometry is developed which is fully compatible with commercial technologies. Total-dose and postirradiation effects are investigated in detail on transistors and circuits designed on a 2K-gate test chip. The data show that this technology is radiation hardened up to a total dose of 1 Mrad(SiO2) and may be functional at 10 Mrad(SiO2 ). Moreover, using a simple analytic model for switching of CMOS circuits, it is shown that the changes in circuit performance are well correlated with those in transistor characteristics

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Nuclear Science, IEEE Transactions on  (Volume:37 ,  Issue: 6 )