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A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects

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2 Author(s)
Taeho Kim ; Dept. of EECS, Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Kyounghoon Yang

A new large-signal model of InP/InGaAs single heterojunction bipolar transistors (SHBTs) has been developed which includes self-heating and impact ionization effects. The model is based on the conventional Gummel-Poon large-signal BJT model. The self-heating and impact ionization effects observed from InP-based SRBTs were modeled through a macro modeling approach. In order to take into account the dependence of impact ionization on the applied voltage and thermal effect, a feedback current source and a temperature dependent voltage source were used in the model as a function of junction temperature, I/sub C/ and V/sub CB/. The model implemented in HP-ADS is verified by comparing the simulated and measured data in DC, multi-bias small-signal S-parameters and large-signal microwave power characteristics.

Published in:

Microwave Symposium Digest, 2002 IEEE MTT-S International  (Volume:3 )

Date of Conference:

2-7 June 2002