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A practical small-signal equivalent circuit model for RF-MOSFETs valid up to the cut-off frequency

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9 Author(s)
H. Kawano ; Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan ; M. Nishizawa ; S. Matsumoto ; S. Mitani
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The non-quasistatic contribution to the Y-parameters is shown to be much smaller than usually expected. This is especially true for advanced pocket-implant MOSFET technologies being developed for RF devices. Therefore, a simple and practical equivalent-circuit model valid up to the cut-off frequency becomes possible. The small interdependence of the different model elements allows an explicit and sequential extraction of the individual element values.

Published in:

Microwave Symposium Digest, 2002 IEEE MTT-S International  (Volume:3 )

Date of Conference:

2-7 June 2002