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Radiation effects on fluorinated field oxides and associated devices

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5 Author(s)
Y. Nishioka ; Hitachi Ltd., Tokyo, Japan ; T. Itoga ; K. Ohyu ; M. Kato
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Fluorine has been introduced into the LOCOS field oxide by high-energy (2-MeV) F implantation and subsequent annealing at 950°C for 60 min. Improved radiation hardness of the field oxide and its associated device parameters was observed. N-channel MOSFETs isolated by the fluorinated oxide exhibit a lower radiation-induced source-drain leakage current. This is attributed to the smaller density of radiation-induced positive oxide charge in the fluorinated field oxide compared to its control. This is consistent with experimental results showing that threshold voltage shifts of the field-oxide FETs are smaller than their control. In addition, the radiation-induced leakage currents of reverse biased n+p-junction diodes fabricated with the F implantation process are suppressed, suggesting that the generation of interface traps at the gate SiO2-Si and the field SiO2-Si interfaces is also reduced in the fluorinated devices

Published in:

IEEE Transactions on Nuclear Science  (Volume:37 ,  Issue: 6 )