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Three W-band resistive mixer architectures have been designed and their performance compared and contrasted. The mixers were fabricated using 0.1 /spl mu/m gate length InP HEMT technology for improved conversion loss performance compared to GaAs pHEMT. In particular, a state of art 94 GHz sub-harmonic resistive mixer is reported with 9.5 dB conversion loss when operated with a LO drive level of 2 dBm.
Microwave Symposium Digest, 2002 IEEE MTT-S International (Volume:3 )
Date of Conference: 2-7 June 2002